Modulate Optoelectronic Properties of Tin-Doped Gallium Oxide Thin Films for High-Performance Ultraviolet Detection and Imaging

Gallium oxide (Ga2O3) garners increasing attention in ultraviolet optoelectronic devices and power devices due to its wide bandgap and high chemical stability. Here, we report a synthesis method of tin-doped Ga2O3 films via a solution-based process. The film’s properties can be controlled by the preparation procedure. With an optimized doping concentration, the photodetector shows outstanding comprehensive performance, including a responsivity of 102.5 mA/W and light-to-dark current ratio of 1.54 × 103. We extend this approach to flexible substrates. The obtained films and detectors exhibit exceptional mechanical flexibility. This work provides a strategy of doped-Ga2O3 film into flexible UV optoelectronic devices.