Low-temperature fabrication of BTO-based relaxor ferroelectric thick films with multi-layered architecture

Haitao Zhang; Weibing Ma; Z H Zhang; Naihe Yi; Jingnan Hong

doi:10.1039/d6ra02102f

January 1, 2026RSC AdvancesOpen Access

Low-temperature fabrication of BTO-based relaxor ferroelectric thick films with multi-layered architecture

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Key Points

To develop a low-temperature sintering process for BTO-based relaxor ferroelectric thick films with a multi-layered structure.
Fabricated screen-printed BTO-based thick films with lead-free glass.
Employed low-temperature sintering at 900 ℃.
Utilized a sandwich structure for enhanced performance.
Achieved an energy density of 1.65 J cm−3.
Demonstrated an efficiency of 74.3% in the thick films.

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Implication

Demonstrates high energy density in BTO-based thick films, suggesting efficient low-temperature applications.

Abstract

A screen‑printed BTO-based thick film with lead-free glass and sandwich structure enables low-temperature sintering (900 ℃). It achieves a high energy density of 1.65 J cm −3 , efficiency of 74.3%.

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Zhang et al. (2026) studied this question.

synapsesocial.com/papers/6a0d5100f03e14405aa9d36d https://doi.org/10.1039/d6ra02102f

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Low-temperature fabrication of BTO-based relaxor ferroelectric thick films with multi-layered architecture

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

Low-temperature fabrication of BTO-based relaxor ferroelectric thick films with multi-layered architecture

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

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