Answers are grounded in this paper and cite their sources.
Electron microscopy study reveals dislocation core structures and sublattice polarity in CdTe/GaAs(001), indicating distinct glide-type and asymmetric Lomer configurations.
A strategy is presented for determining sublattice polarity at defects in compound semiconductors. Core structures of 60-degree and Lomer dislocations in the CdTe/GaAs(001) system have been obtained by the application of maximum-entropy analysis to Z-contrast images (Z is atomic number) obtained in a 300-kilovolt scanning transmission electron microscope. Sixty-degree dislocations were observed to be of the glide type, whereas in the case of Lomer dislocations, both a symmetric (Hornstra-like) core and an unexpected asymmetric structure made up of a fourfold ring were seen.
No takes yet. Share an insight, caveat, or question.
McGibbon et al. (1995) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: