It is shown that a continuous wave output power reaching 1.8 mW at 252 GHz is generated by photomixing in a low-temperature-grown GaAs photoconductor using a metallic mirror-based Fabry-Pérot cavity. To the best of our knowledge, it is the highest power ever reported for a single photomixer in the J-band.
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Peytavit et al. (2013) studied this question.
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