BaMoO₄ thin films prepared by electrochemical method at room temperature

Highly crystallized BaMoO 4 films were prepared on molybdenum substrates in Ba(OH) 2 solutions by electrochemical method at room temperature. The deposition conditions (reaction temperature and current density) during electrochemical formation were researched. The films were characterized by using the X‐ray Diffraction (XRD), Scanning Electronic Microscopy (SEM) and X‐ray Photoelectron Spectroscopy (XPS) analyses. The XRD analyses show that the films are good crystalline with single scheelite‐type tetragonal structure; the SEM photographs show that the films are densely deposited with double tetragonal tapers in shape; and the XPS analyses reveal that the composition of the BaMoO 4 films (embodied Ba 2+ , Mo 6+ and O 2‐ ) is in agreement with stoichiometry. The optimum electrochemical conditions for BaMoO 4 films formation are the lower reacting temperature (near room temperature) and the feasible current density (about 1mA/cm 2 )