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June 1, 1972Journal of Applied Physics

GaAs–AlxGa1−xAs Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAs

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Authors

EPE. PinkasTechnion – Israel Institute of TechnologyBMB.I. MillerMerck & Co., Inc., Rahway, NJ, USA (United States)IHI. HayashiShizuoka Cancer Center

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Pinkas et al. (1972) studied this question.

synapsesocial.com/papers/6a0e370834efb28f74c828ddhttps://doi.org/10.1063/1.1661602
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