The minority-carrier lifetime in n-Al0.38Ga0.62As has been investigated by laser-induced photoluminescence. A variety of device structures were used to reduce interface recombination effects, including double heterostructures. Bulk lifetimes of about 18 ns were seen at doping levels of 1×1016 cm−3 or less. These data suggest that minority-carrier devices are feasible in high aluminum AlGaAs, contrary to the suggestion of earlier work.
No takes yet. Share an insight, caveat, or question.
Ahrenkiel et al. (1988) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: