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The nonequilibrium Hall effect (photo-Hall effect), conductivity, and magnetoresistance are analysed for an inhomogeneous excited semiconductor. A method for determining carrier concentration and mobility from experimental data is suggested. The influence of electron-hole scattering on the mentioned above effects is evaluated for germanium. Photoconductivity and photoluminescence are compared according to the solution of the diffusion equation when the surface recombination and a light pulse of Gaussian form are taken into account.
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J. Vaitkus (1976) studied this question.
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