On the radiative recombination rate in silicon

The radiative recombination rate R in silicon at 300°K was measured as a function of the electron and hole concentration n = p at high injection levels. Carriers were injected in a p-i-n device, and their concentration was measured by charge extraction. The equation R = B n p = B n2 was verified up to n = 2×1017 cm−3 The radiative recombination probability was found to be B = 1.1 × 10−14 cm3/s.