Carrier Management Through Graded Al Composition and Si‐Doped Quantum Barrier Engineering for High‐Efficiency AlGaN‐Based Deep‐Ultraviolet LEDs

Efficient carrier management remains a critical challenge in AlGaN‐based deep‐ultraviolet light‐emitting diodes (DUV LEDs), due to severe electron leakage and inefficient hole injection arising from polarization‐induced electric fields and large band discontinuities. Here, a synergistic quantum barrier engineering strategy combining graded Al composition and graded Si doping is proposed and investigated through numerical simulations to optimize carrier transport in the multiple quantum wells (MQWs). The graded Al composition tailors the band alignment and alleviates abrupt polarization discontinuities at the barrier interfaces, while the graded Si doping introduces electrostatic screening to redistribute the internal electric field and improve carrier confinement. The combined engineering approach enables simultaneous optimization of the band profile and electric‐field distribution, leading to reduced hole injection barriers, suppressed electron overflow, and uniform radiative recombination across the MQWs. As a result, the optimized device exhibits a 69.55% enhancement in peak internal quantum efficiency (IQE), a reduction of efficiency droop from 46.62% to 42.57%, and increases calculated light output power (LOP) by 81.72% at 200 A/cm 2 compared with conventional structure, while maintaining emission near 283 nm. These results demonstrate that synergistic quantum barrier engineering provides an approach for regulating carrier transport and improving the optical performance of AlGaN‐based DUV LEDs.