Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

InGaAsP/InGaP lasers emitting at 724–727 nm have been fabricated on GaAs substrates using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm2 by thinning the active layer. Room-temperature cw operation is achieved for the first time in the lasing wavelength range below 760 nm in this quaternary system.