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July 1, 1973Journal of Applied Physics

Dependence of threshold and electron lifetime on acceptor concentration in GaAs–Ga1−xAlxAs lasers

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Authors

CHC. J. HwangHewlett-Packard (United States)JDJ. C. DymentDefence Science and Technology Laboratory

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Hwang et al. (1973) studied this question.

synapsesocial.com/papers/6a6f2e3f5d37378ac1dc421ehttps://doi.org/10.1063/1.1662740
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