January 1, 2019Open Access

Charge balance control of quantum dot light emitting diodes with atomic layer deposited aluminum oxide interlayers

HJHoseok JinGovernment of the Republic of Korea HMHyungseok C. MoonPalo Alto Institute WLWoosuk LeeSungkyunkwan University

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Abstract

We developed a 1.0 nm thick aluminum oxide (Al2O3) interlayer as an electron blocking layer to reduce leakage current and suppress exciton quenching induced by charge imbalance in inverted quantum dot light emitting diodes (QLEDs).

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Jin et al. (Tue,) studied this question.

synapsesocial.com/papers/6a0e39b2af86e8b097c8415f https://doi.org/https://doi.org/10.1039/c9ra00145j

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