Interfacial doping for efficient charge injection in organic semiconductors

Interfacial doping in organic semiconductors (OSs) is an important technique to achieve efficient organic electronic devices. In this paper, we discuss how the charge injection into an OS can be enhanced by the insertion of a thin interfacial layer or an electrically doped OS layer between an electrode and an undoped OS. We present that the vacuum level shift and Fermi level modification by the electrical doping is the origin of the efficient charge injection through a metal–organic junction and an organic–organic junction. Application to organic electronics such as organic light‐emitting diodes (OLEDs) and organic photovoltaics (OPVs) is briefly summarized.