High‐Resolution Laser‐Induced Forward Transfer of Graphene and Graphene/hBN Heterostructures Onto SiN Photodetector Patterns

Despite the remarkable progress of graphene and other 2D materials (2DM) over the past 10 years, the wide application of these materials in electronic and photonic integrated circuits is still hampered by hurdles related to their transfer and wafer‐scale integration processes. We report on the single‐step patterning and transfer of single‐layer graphene (SLG) and hexagonal boron nitride (hBN) SLG/hBN heterostructures, as well as graphene multilayer stacks onto patterns widely applied in photonic and electronic components using Laser‐Induced Forward Transfer (LIFT). By optimizing laser fluence, beam shaping, and alignment conditions, graphene and graphene/hBN heterostrucures with lateral dimensions down to 15 μm were successfully deposited across surface topographies with step‐heights up to 100 nm. Raman spectroscopy and electrical characterization confirm the preservation of the material’s structural and electronic integrity, with FET devices exhibiting characteristic ambipolar transport. These results demonstrate LIFT as a scalable, digital, and residue‐free paradigm for incorporating 2D active elements into complex SiN‐based optoelectronic platforms and photodetectors.