Evidence of band bending observed by electroabsorption studies in polymer light emitting device with ionomer/Al or LiF/Al cathode

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We report electroabsorption studies of indium–tin–oxide (ITO)/poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene] insulating layer/Al light-emitting devices. An ionomer and LiF were used as the insulating layer. The internal electric field was nullified at the same bias voltage of 0.6 V for different cathodes of Al, ionomer/Al, and LiF/Al. The bias voltage is close to the work-function difference between ITO and Al. Average electric field in the emitting layer was reduced by inserting the insulating layers. On the contrary, current density was increased significantly. These observations suggest band bending in the devices with ionomer/Al or LiF/Al cathode.