Topological band inversion in HgTe(001): Surface and bulk signatures from photoemission

This is the authors' abstract. We don't add key points for this paper.

HgTe is a prime example of a topological material that exhibits a range of topological phases based on its dimensionality and lattice strain. The key to its topological properties lies in the band inversion between the Hg 6s and Te 5p valence levels, leading to the emergence of surface states. In this study, the authors present an in-depth examination of the electronic structure of strained HgTe films using angle-resolved photoelectron spectroscopy and density functional theory. The results offer a direct visualization of the topological band inversion and surface states present in HgTe.