The gas phase reactions of tetraethoxysilane in atomic oxygen‐induced chemical vapor deposition were investigated. A high‐resolution gas chromatography/mass spectrometry examination of the reaction products, collected in a cold trap, revealed the presence of linear and cyclic siloxane oligomers containing the ‐(EtO) 2 SiO‐ repeating unit. The structure of the identified oligomers and mechanisms of TEOS reactions with atomic oxygen suggest that diethoxysilanone plays a predominant role in the silica film growth process.
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Wróbel et al. (1996) studied this question.
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