Temperature dependence of threshold current for quantum-well AlxGa1−xAs-GaAs heterostructure laser diodes

Data are presented showing that the threshold current density Jth(T) of quantum-well AlxGa1−xAs-GaAs heterostructure laser diodes, grown by MO-CVD, is less temperature dependent than that of conventional DH lasers. T0 in the usual expression Jth∝exp(T/T0) can be high as 437 °C. This behavior is explained in terms of the steplike density of states and the disturbed electron and phonon distribution functions of the quantum-well active region.