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February 15, 1979Applied Physics Letters

Continuous 300 °K laser operation of single-quantum-well AlxGa1−xAs-GaAs heterostructure diodes grown by metalorganic chemical vapor deposition

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Authors

RDRussell D. DupuisGeorgia Institute of TechnologyPDP.D. DapkusUniversity of Southern CaliforniaRCR. ChinCamden and Campbelltown Hospitals

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Dupuis et al. (1979) studied this question.

synapsesocial.com/papers/6a1d287b68a6eca4522f46bahttps://doi.org/10.1063/1.90753
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Low-threshold continuous laser operation (300–337 °K) of multilayer MO-CVD AlxGa1−xAs-GaAs quantum-well heterostructures1978 · 56 citations
  2. 2JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE1970 · 600 citations
  3. 3Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures1975 · 217 citations
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  5. 5Continuous room-temperature operation of Ga(1−x)AlxAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition1978 · 49 citations