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Strained In0.52Al0.48As/InAs single quantum wells have been grown by molecular beam epitaxy on InP substrates and their structural quality and commensurability demonstrated by transmission electron microscopy. Intense photoluminescence in the wavelength range of 1.2–1.6 μm for well widths between 10 and 30 Å was obtained, indicating a very efficient carrier collection into the highly (3.4%) biaxially compressed InAs wells.
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Miguel et al. (1988) studied this question.
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