Low threshold current density 1.5 μm (In,Ga,Al)As quantum well lasers grown by MBE

The use of strained ternary and quaternary (In,Ga,Al) quantum wells for the active regions in MBE grown 1.5 μm lasers has been compared. Threshold current densities as low as 530 A/cm2 were obtained using compressively strained (In,Ga,Al)As quaternary quantum wells with waveguide losses of 9.4 cm−1 and a current injection efficiency of 83%. These results represent the best (Al,Ga,In)As/InP quantum well lasers grown by MBE.