Photopumped laser operation of MO-CVD AlxGa1−xAs near a GaAs quantum well (λ≳6200 Å, 77 °K)

Data are presented showing that AlxGa1−xAs (x∼0.42) grown by metalorganic chemical vapor deposition (MO-CVD) will operate as a photopumped laser to wavelengths as short as ∼6200 Å (77 °K). From the different spectral behavior of two separately photopumped epitaxial AlxGa1−xAs (x∼0.36) confining layers (1 and 0.3 μm thick) with an 80-Å (and a comparison 200-Å) GaAs quantum-well center layer, the recombination of hot electrons with holes collected in the quantum layer is used to estimate ΔEv.