The efficiency of GaAs1−xPx diodes for x>0.45 has been found to be greatly enhanced by the addition of nitrogen doping. The diodes were fabricated by means of Zn diffusion into vapor-grown GaAs1−xPx doped with N and Te. The effects of nitrogen doping on diode efficiency, emission spectra, and brightness as a function of alloy composition are discussed.
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Groves et al. (1971) studied this question.
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