We present a model of the double barrier resonant-tunneling diode (DBRTD), in which the tunneling is described in a 1D transfer matrix approach, based on full wave coherence, and in which the electronic potential is determined selfconsistently from the 3D charge distribution in the structure. Within this simple model, we are able to describe the diode's intrinsic bistability. Results are presented in the form of I-V-characteristics for GaAs-AlGaAs structures. Our approach is evaluated with respect to existing models.
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Klisz et al. (1977) studied this question.
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