Experimental study demonstrates high-sensitivity plasmon-free SERS in manganese-nickel phosphorus trichalcogenides, highlighting a pathway for semiconductor SERS substrates.
Surface‐enhanced Raman scattering (SERS) is widely employed due to its ultra‐high sensitivity, non‐destructive nature, and ability to provide label‐free molecular fingerprint information. In this work, a novel semiconductor‐based SERS substrate, 2D metal phosphorus trichalcogenides (2D‐MPTs) is proposed, and a new “synergistic resonance” effect is introduced to maximize chemical mechanism (CM)‐driven SERS performance via alloy engineering. By precisely tuning the energy levels of Mn 1−x Ni x PS 3 (0 ≤ x ≤1) alloys, the optimized Mn 0.73 Ni 0.27 PS 3 substrate demonstrates remarkable SERS sensitivity, with an enhancement factor of 1.4 × 10 5 and a detection limit as low as 1.0 × 10 −9 mol L −1 for rhodamine 6G (R6G). This outstanding performance is attributed to the synergistic contribution of: i) strong adsorption capability and efficient charge transfer (CT) between the semiconductor substrate and analytes, and ii) maximized excitation‐resonance‐facilitated CT coupled with molecular‐resonance‐facilitated CT. Overall, this work advances the understanding of CM and offers a pathway for designing highly effective semiconductor SERS substrates.
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Gan et al. (2025) studied this question.
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