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January 1, 1975IBM Journal of Research and Development

Device Design Considerations for Ion Implanted n-Channel MOSFETs

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Authors

VRV.L. RideoutUniversity of Southern CaliforniaFGF.H. GaensslenON Semiconductor (United States)ALA. LeBlancIBM (United States)

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Rideout et al. (1975) studied this question.

synapsesocial.com/papers/6a0fdf7e57bfcc72645fc00ehttps://doi.org/10.1147/rd.191.0050
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