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April 15, 1973Applied Physics Letters

Threshold voltage and ``gain'' term β of ion-implanted enhancement-mode n-channel MOS transistors

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MKMototaka KamoshidaToshiba (Japan)

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Mototaka Kamoshida (1973) studied this question.

synapsesocial.com/papers/6a6f2ef031a3df8243279d7bhttps://doi.org/10.1063/1.1654691
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Shift of the Gate Threshold Voltage of MOS Transistors dne to the Introduction of Shallow Impurities1971 · 29 citations
  2. 2THE ADJUSTMENT OF MOS TRANSISTOR THRESHOLD VOLTAGE BY ION IMPLANTATION1971 · 66 citations