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January 1, 1971Japanese Journal of Applied Physics

Shift of the Gate Threshold Voltage of MOS Transistors dne to the Introduction of Shallow Impurities

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TTToshio TanakaMie University

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Toshio Tanaka (1971) studied this question.

synapsesocial.com/papers/6a6f2f2ea2d7cf2e39c28909https://doi.org/10.1143/jjap.10.84
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