High-Performance Infrared Photodetectors Based on Graphene Nanoribbon Vertical Heterojunctions via Dissociated Double-Walled Carbon Nanotubes

Graphene nanoribbons (GNRs) inherit the exceptional carrier mobility of graphene while offering tunable bandgaps, making them promising for high-performance optoelectronics. Here, we report a high-performance near-infrared photodetector based on a p-GNR/Al2O3/n-Si vertical heterojunction, where GNR is directly produced by dissociating double-walled carbon nanotubes (DWCNTs). The 10 nm Al2O3 interlayer serves as an effective barrier and passivation layer, suppressing dark current and enhancing interfacial charge separation. Under 1064 nm illumination, the device delivers outstanding performance. At −6 V bias, the responsivity and detectivity reach 159.55 A/W and 2.01 × 1012 Jones, respectively. Notably, under zero-bias self-powered mode, it still achieves a high responsivity of 8.71 A/W, a detectivity of 1.15 × 1013 Jones, and a fast response time of 307.5 μs. These results fully validate the feasibility of GNR-based heterojunctions for high-performance optoelectronic devices and pave the way for their future integration into low-power, high-sensitivity photodetection systems and next-generation optoelectronic integrated circuits.