High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride Monolayers on Carbon Nanotubes

Jonathan Bradford; William J. Cull; Amy Collins; Tin S. Cheng; Christopher Mellor; Andrei Khlobystov; Alexandre Gloter; Alexandra Ibanez; Bernard Gil; Pierre Valvin; Guillaume Cassabois; Alberto Zobelli; Sergei Novikov

doi:10.1039/d6nr01376g

January 1, 2026NanoscaleOpen Access

High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride Monolayers on Carbon Nanotubes

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Key Points

This research aims to investigate the growth process of boron nitride layers on carbon nanotubes using high-temperature methods.
Utilized high-temperature molecular beam epitaxy (HT-MBE) for layer growth
Employed transmission electron microscopy for characterization
Investigated various growth parameters
Successfully grew high-quality hexagonal boron nitride monolayers on multiwalled carbon nanotubes
Characterization confirms the structural integrity and uniformity of the boron nitride layers
Findings support potential applications in electronic and optoelectronic devices

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Implication

Demonstrates growth of boron nitride layers on carbon nanotubes, indicating new material applications.

Abstract

We report the growth of boron nitride (hBN) layers on multiwalled carbon nanotubes (MWCNTs) by high-temperature molecular beam epitaxy (HT-MBE). Using a variety of characterisation techniques, including transmission electron microscopy...

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Cite This Study

Bradford et al. (2026) studied this question.

synapsesocial.com/papers/6a0ff3aed674f7c03778c8d9 https://doi.org/10.1039/d6nr01376g

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High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride Monolayers on Carbon Nanotubes

Key Points

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Implication

Abstract

Discussion

Cite This Study

High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride Monolayers on Carbon Nanotubes

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

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