Reliability Study and Lifetime Prediction of 270 nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have been widely deployed in water treatment, sterilization, and optical communication owing to their intrinsic merits of mercury-free operation, compact footprint, and fast turn-on capability. However, poor reliability and short operating lifetime, mainly caused by electrical degradation and poor heat dissipation, have severely limited their commercial applications. In this work, the degradation mechanism of 270 nm DUV LEDs was systematically studied via multi-condition accelerated aging tests. Results confirm that electrical stress is the dominant factor inducing device degradation, while thermal stress plays a secondary role. Electrical stress generates internal defects, increases leakage current and thermal resistance, enhances non-radiative recombination, and causes a sharp drop in light output power. Based on test data, the L70 lifetimes predicted by the inverse power law and the Arrhenius models are 5832 h and 5724 h, with relative errors of 8.59% and 10.28% compared with the measured 6380 h. This work provides reliable experimental support for the performance evaluation and lifetime prediction of DUV LEDs.