A well-synchronized sensing/equalizing method for sub-1.0-V operating advanced DRAMs

Proposes an advanced DRAM array driving technique which can achieve low-voltage operation, a well-synchronized sensing and equalizing method. This method sets the DRAM array free from the body effect, achieves a small influence of the short channel effect, and reduces the leakage current. The sense and restore amplifier and equalizer can operate rapidly under a low-voltage operating condition such as 1.0 V V/sub CC/. Therefore, one can make determining the V/sub th/ easy for the satisfaction of the high-speed, the low-power dissipation, and a simple device structure. The well-synchronized sensing and equalizing method is applicable to low-voltage operating DRAMs with capacity of 256 Mbits and more.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>