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October 1, 1991Japanese Journal of Applied Physics

Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers

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Authors

Shuji Nakamura
Shuji NakamuraNEC (Japan)MSMasayuki SenohNichia Corporation (Japan)TMTakashi MukaiNational Institute of Advanced Industrial Science and Technology

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Cite This Study

Nakamura et al. (1991) studied this question.

synapsesocial.com/papers/6a11fa32ccefb17cd5cccff8https://doi.org/10.1143/jjap.30.l1708
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  1. 1P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)1989 · 1,993 citations
  2. 2Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer1986 · 2,208 citations
  3. 3Further Remarks on Electron Beam Pumping of Laser Materials1966 · 41 citations