High-Precision Compact Modeling Technique for GaN HEMT Devices in 5G RFIC Design

Accurate small-signal modeling of GaN HEMT devices is essential for RF power amplifier design. However, conventional compact models exhibit significant inaccuracies in the S22 parameter owing to improper gds extraction. This study presents a systematic methodology using pulsed S-parameter measurements to mitigate self-heating effects and accurately extract bias-dependent gds values for integration into an Angelov compact model. The experimental validation demonstrates significant improvements, reducing the S22 error rate from 15 % to 8.5 % up to 10 GHz, with enhanced output-matching characteristics crucial for 5G PA design.