High-Performance Top-Gate and Dual-Gate p-Type SnO Thin-Film Transistors Compatible with 350 °C Back-End-of-Line Processes

/V·s. By replacing Pt with W as the source/drain electrodes, robust p-type conduction is preserved after 350 °C annealing, satisfying BEOL thermal constraints. In addition, the top-gate operation mode suppresses thermally activated electron current by over 3 orders of magnitude. The devices exhibit stable operation under bias stress and long-term storage with good device-to-device reproducibility. These results establish a thermally robust p-type SnO TFT platform for BEOL-compatible monolithic 3D oxide electronics.