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October 1, 2002IEEE Transactions on Electron Devices

Device modeling of ferroelectric memory field-effect transistor (FeMFET)

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Authors

HLHang-Ting LueNational Yang Ming Chiao Tung UniversityCWChien-Jang WuNational Taiwan Normal UniversityTTTseung‐Yuen TsengNational Yang Ming Chiao Tung University

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Lue et al. (2002) studied this question.

synapsesocial.com/papers/6a12e9de5bb7edc7189e75afhttps://doi.org/10.1109/ted.2002.803626
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