Reports low power consumption using BiOCl dielectric in 2D transistors, indicating promising integration potential.
Transistors with Low Power Consumption This study reports the low-temperature chemical vapor deposition method to grow single-crystalline 2D BiOCl. The back-gated MoS2 transistor utilizing BiOCl as the dielectric shows 108 on/off ratio, 61 mV dec-1 SS, low hysteresis, and stability over 3 months, establishing BiOCl as a leading high-κ dielectric for back-end-of-line integration. More details can be found in the Research Article by Lei Tang, Zhongchao Wei, Qijie Liang, and co-workers (DOI: 10.1002/adfm.74968).
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Hu et al. (2026) studied this question.
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