Comparative experimental study demonstrates higher residual strain sensitivity for polariscopy over photoluminescence spectroscopy in ZnTe crystals, indicating improved defect screening.
We demonstrate that sensitivity of polariscopy to residual strains is higher than that of the photoluminescence spectroscopy in a (110)-oriented ZnTe single crystal. We carried out x-ray topography and micro θ-2θ x-ray diffraction measurements in order to thoroughly clarify the crystal quality connecting with the residual strains. The two x-ray analyses revealed that there is misalignment from the [110] direction in some regions of the present sample....
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Hideo Takeuchi (2015) studied this question.
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