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January 1, 2022CrystEngComm

Morphological and microstructural analysis of triangular defects in 4H-SiC homoepitaxial layers

Jinying Yu Yi Yu Zhiqiang Bai Yan Peng Xiao-Yan Tang Xiaobo Hu Xuejian Xie Xiangang Xu Xiufang Chen

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Abstract

Surface morphologies of triangular defects with TD-I, TD-II and TD-III observed by optical microscopy.

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Cite This Study

Yu et al. (2022) studied this question.

synapsesocial.com/papers/6a152a32a2f71238514e26fa https://doi.org/10.1039/d1ce01606g

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Experimental and Simulated Results of SiC Microwave Power MESFETsOriginal Research · 1997 · 56 citations
2Silicon carbide high-power devicesOriginal Research · 1996 · 445 citations
3Performance limiting surface defects in SiC epitaxial p-n junction diodesOriginal Research · 1999 · 223 citations
4Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth techniqueOriginal Research · 2009 · 166 citations
5Micropipes in SiC Single Crystal Observed by Molten KOH EtchingOriginal Research · 2021 · 17 citations

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