Demonstrates reduced operating voltage in 8T SRAM arrays, indicating improved power efficiency.
Infrequent dynamic events like V CC droops and temperature changes result in the use of a static V CC guardband in 8T SRAM arrays. This paper proposes the use of tunable replica bits (TRBs) as a potential solution to mitigating a part of the V CC guardband. Measured data on a 16 KB 8T array featuring tun able replica bits illustrate 9% reduction of the operating minimum V CC (V MIN ) and correspondingly a 7.5% reduction in array power.
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Raychowdhury et al. (2011) studied this question.
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