Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level

SiGe (C)/Si(C) multiquantum wells have been studied as a thermistor material for future bolometers. A thermistor material for uncooled Si-based thermal detectors with thermal coefficient of resistance of 4.5%/K for 100×100 μm2 pixel sizes and low noise constant (K1/f) value of 4.4×10−15 is presented. The outstanding performance of the devices is due to Ni-silicide contacts, smooth interfaces, and high quality multiquantum wells containing high Ge content.