Improvement of infrared detection using Ge quantum dots multilayer structure

This is the authors' abstract. We don't add key points for this paper.

Monocrystalline SiGe/Si multiquantum dot and well structures have been manufactured/compared as thermistor materials for infrared detection. The performance of the devices (both the thermal and electrical) has been very sensitive to the quality of the epitaxial layers which is evaluated by the interfacial roughness and strain amount. This study demonstrates that the devices containing quantum dots have higher thermal coefficient resistance 3.4%/K with a noise constant (K1/f) value of 2×10−9.