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The LabVIEW system suitability for a device research laboratory is evaluated in this paper. The system is applied successfully to the study of MOSFET device degradation under low radiation doses with the highly repetitive measurement using the well known charge pumping technique. Radiation-induced threshold voltage shift (DeltaV TH ), radiation-induced flatband voltage shift (DeltaV FB ), radiation-induced oxide-trap (DeltaN OT ); and radiation-induced interface-trap (DeltaN IT ) are extracted. The irradiated MOSFET transistors are characterized with the developed software.
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Oussalah et al. (2007) studied this question.