Forming-free artificial synapses with Ag point contacts at interface

Ag/Ta2O5/CuO/Pt memristive devices with Ag point contacts at the interface exhibit forming-free and partial volatile analog resistive switching properties. Versatile synaptic functions, like the short-term plasticity, the long-term potentiation and the paired-pulse facilitation, are emulated with these devices. The Ag point contacts in the Ta2O5 layer are verified through transmission electron microscope (TEM) and X-ray photoelectron spectroscope (XPS). The Ag point contacts at the interface endow the device the transition from the electrochemical metallization mode to the valence change mode, and the analog resistive switching behavior and neuromorphic functions. This interface engineering of introducing point contacts at the interface provides a way for the development of neuromorphic devices with low power consumption.