Ferroelectric Diodes with Charge Injection and Trapping

Ferroelectric diodes are promising for fast, low-power nonvolatile memory, but a major roadblock to this technology is a lack of reliability and reproducibility, the origins of which remain poorly understood. Through experiment and modeling, the authors show that the electroresistance ratio, resistive-switching polarity, and high- and low-resistance states all can be significantly affected by interfacial charge injection and trapping in such a device. This work carries important implications for the development of reliable resistive-switching memory.