Low-Energy Electron Diffraction Determination of the Atomic Arrangement on Impurity-Stabilized Unreconstructed Si{111} Surfaces

An impurity-stabilized Si{111} 1×{}1 structure has been obtained by depositing minute amounts of Te on a clean Si{111} 7×{}7 surface. A low-energy electron diffraction structure analysis of this 1×{}1 structure reveals that the atomic arrangement is essentially bulklike, but involves a slight contraction of the first interlayer spacing by about 15% with respect to the bulk value.