Electrical Properties of Near-Degenerate Boron-Doped Silicon

Measurements of extrinsic resistivity and Hall effect have been carried out for a group of single crystals of silicon containing a wide range of boron concentration, with particular stress on samples in the near-degenerate range, 10¹⁸ to 10¹⁹ boron atoms per cm³. The anomalous Hall mobility effect previously observed by Morin and Maita in silicon was studied in finer detail over the temperature range 25^∘{}K to 300^∘{}K. For degenerate samples the 300^∘{}K Hall mobility is approximately 46 cm²/volt sec.