Demonstrates low contact resistance in 2D electronics, indicating improved device performance.
Hypotaxy Hypotaxial growth strategy enables simultaneous definition of MoS2 channels and metal contacts in a single step. By selectively controlling graphene and metal thickness, clean edge and van der Waals bottom contacts are formed without lithography-induced damage. This approach delivers low contact resistance, high device uniformity, and scalable integration of 2D electronics. More details can be found in the Research Article by Gwan-Hyoung Lee and co-workers (DOI: 10.1002/adfm.202528582).
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Moon et al. (2026) studied this question.
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