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August 19, 2025Open Access

Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 to annihilate grain boundaries for scalable 2D electronics

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Authors

YSYoshiki SakumaKAKeisuke AtsumiTHTakanobu Hiroto

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Overview

Novel epitaxial growth method improves single-crystalline MoS2 quality on sapphire substrates, suggesting scalability for 2D electronics.

Key Points

  • Continuous, unidirectional single-crystalline MoS2 significantly reduces grain boundaries.
  • Achieved phonon-limited mobility of 66 cm²/Vs at room temperature and 749 cm²/Vs at low temperatures.
  • The study utilized metal-organic chemical vapor deposition (MOCVD) to grow high-quality MoS2 layers.
  • This strategy for van der Waals epitaxy may enable further advancements in 2D semiconductor applications.

Cite This Study

Sakuma et al. (2025) studied this question.

synapsesocial.com/papers/68af4546ad7bf08b1ead2ff9https://doi.org/10.21203/rs.3.rs-7386422/v1
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics2026 · 5 citations
  2. 2Spontaneous and self-oriented growth during chemical vapor epitaxy of single-crystalline MoS22025
  3. 3Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control2024 · 164 citations
  4. 4Unidirectional Epitaxy of Wafer-Scale MoS<sub>2</sub> on Sapphire via Growth Kinetics Control2025 · 1 citations
  5. 5Recrystallization‐Driven Formation of Single‐Crystalline MoS <sub>2</sub> by Metal‐Organic Chemical Vapor Epitaxy2026